English

All Products

View All >>
  • SI7192DP-T1-GE3

SI7192DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7192DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 629
  • Description: MOSFET N-CH 30V 60A PPAK SO-8 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Number of Terminations 5
Termination SMD/SMT
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
ECCN Code EAR99
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Resistance 1.9mOhm
Subcategory FET General Purpose Powers
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Fall Time (Typ) 32 ns
Turn-Off Delay Time 86 ns
Terminal Position DUAL
Terminal Form C BEND
Continuous Drain Current (ID) 60A
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Gate to Source Voltage (Vgs) 20V
Pin Count 8
JESD-30 Code R-XDSO-C5
Drain Current-Max (Abs) (ID) 42A
Dual Supply Voltage 30V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Nominal Vgs 1 V
Height 1.04mm
Number of Channels 1
Length 4.9mm
Power Dissipation-Max 6.25W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Factory Lead Time 14 Weeks
Width 5.89mm
Contact Plating Tin
Power Dissipation 6.25W
Radiation Hardening No
Mount Surface Mount
Case Connection DRAIN
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Turn On Delay Time 41 ns
Number of Pins 8
Weight 506.605978mg
REACH SVHC Unknown
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
FET Type N-Channel
Packaging Tape & Reel (TR)
Lead Free Lead Free
Transistor Application SWITCHING
Published 2013
Series TrenchFET®
JESD-609 Code e3
Rds On (Max) @ Id, Vgs 1.9m Ω @ 20A, 10V
Pbfree Code yes
Vgs(th) (Max) @ Id 2.5V @ 250μA
Part Status Active
See Relate Datesheet