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  • SI7232DN-T1-GE3

SI7232DN-T1-GE3

SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7232DN-T1-GE3
  • Package: PowerPAK® 1212-8 Dual
  • Datasheet: PDF
  • Stock: 257
  • Description: SI7232DN-T1-GE3 Dual N-channel MOSFET Transistor; 24 A; 20V; 8-Pin PowerPAK 1212 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 23W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7232
Pin Count 8
JESD-30 Code S-XDSO-C6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.4m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C 25A
Gate Charge (Qg) (Max) @ Vgs 32nC @ 8V
Rise Time 10ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.0164Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 11 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.17mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet