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  • SI7288DP-T1-GE3

SI7288DP-T1-GE3

MOSFET 2N-CH 40V 20A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7288DP-T1-GE3
  • Package: PowerPAK® SO-8 Dual
  • Datasheet: PDF
  • Stock: 341
  • Description: MOSFET 2N-CH 40V 20A PPAK SO-8 (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Number of Pins 8
Transistor Element Material SILICON
Manufacturer Package Identifier PowerPAKSO-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 19mOhm
Subcategory FET General Purpose Powers
Max Power Dissipation 15.6W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7288
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 2.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 10A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 1.2 V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet