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  • SI7317DN-T1-GE3

SI7317DN-T1-GE3

MOSFET -150V 1.2ohm@-10V -2.8A P-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7317DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 186
  • Description: MOSFET -150V 1.2ohm@-10V -2.8A P-Ch T-FET (Kg)

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Details

Tags

Parameters
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 75V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±30V
Factory Lead Time 14 Weeks
Fall Time (Typ) 10 ns
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Turn-Off Delay Time 11 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 2.8A
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 30V
Published 2016
Series TrenchFET®
Pulsed Drain Current-Max (IDM) 2A
JESD-609 Code e3
Part Status Active
Avalanche Energy Rating (Eas) 0.8 mJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Number of Terminations 5
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 19.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
See Relate Datesheet