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  • SI7336ADP-T1-GE3

SI7336ADP-T1-GE3

MOSFET 30V 30A 5.4W 3.0mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7336ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 230
  • Description: MOSFET 30V 30A 5.4W 3.0mohm @ 10V (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.4W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.003Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
Nominal Vgs 1 V
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet