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  • SI7434DP-T1-E3

SI7434DP-T1-E3

MOSFET N-CH 250V 2.3A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7434DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 226
  • Description: MOSFET N-CH 250V 2.3A PPAK SO-8 (Kg)

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Details

Tags

Parameters
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 155m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Rise Time 23ns
Factory Lead Time 14 Weeks
Mount Surface Mount
Drain to Source Voltage (Vdss) 250V
Mounting Type Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Package / Case PowerPAK® SO-8
Fall Time (Typ) 23 ns
Number of Pins 8
Turn-Off Delay Time 47 ns
Weight 506.605978mg
Continuous Drain Current (ID) 3.8A
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 20V
Operating Temperature -55°C~150°C TJ
Drain Current-Max (Abs) (ID) 2.3A
Pulsed Drain Current-Max (IDM) 40A
Packaging Tape & Reel (TR)
DS Breakdown Voltage-Min 250V
Series TrenchFET®
Height 1.04mm
JESD-609 Code e3
Length 4.9mm
Width 5.89mm
Radiation Hardening No
Pbfree Code yes
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 155MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 16 ns
See Relate Datesheet