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SI7439DP-T1-E3

MOSFET P-CH 150V 3A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7439DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 248
  • Description: MOSFET P-CH 150V 3A PPAK SO-8 (Kg)

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Details

Tags

Parameters
Drain to Source Breakdown Voltage -150V
Additional Feature ULTRA LOW-ON RESISTANCE
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Subcategory Other Transistors
Length 4.9mm
Technology MOSFET (Metal Oxide)
Width 5.89mm
Terminal Position DUAL
Terminal Form C BEND
Radiation Hardening No
Peak Reflow Temperature (Cel) 260
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) 40
Lead Free Lead Free
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Factory Lead Time 14 Weeks
Turn On Delay Time 25 ns
Contact Plating Tin
FET Type P-Channel
Mount Surface Mount
Mounting Type Surface Mount
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 5.2A, 10V
Package / Case PowerPAK® SO-8
Number of Pins 8
Vgs(th) (Max) @ Id 4V @ 250μA
Weight 506.605978mg
Current - Continuous Drain (Id) @ 25°C 3A Ta
Transistor Element Material SILICON
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Operating Temperature -55°C~150°C TJ
Rise Time 46ns
Packaging Tape & Reel (TR)
Series TrenchFET®
Drain to Source Voltage (Vdss) 150V
JESD-609 Code e3
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Pbfree Code yes
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Part Status Active
Turn-Off Delay Time 115 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Continuous Drain Current (ID) -5.2A
Threshold Voltage -4V
ECCN Code EAR99
Gate to Source Voltage (Vgs) 20V
Resistance 90mOhm
Drain Current-Max (Abs) (ID) 3A
See Relate Datesheet