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  • SI7456CDP-T1-GE3

SI7456CDP-T1-GE3

VISHAY SI7456CDP-T1-GE3 MOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7456CDP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 508
  • Description: VISHAY SI7456CDP-T1-GE3 MOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 35.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 50V
Current - Continuous Drain (Id) @ 25°C 27.5A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 27.5A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0235Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 50A
Nominal Vgs 1.2 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Subcategory FET General Purpose Powers
See Relate Datesheet