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SI7463DP-T1-E3

Single P-Channel 40 V 0.0092 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7463DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 930
  • Description: Single P-Channel 40 V 0.0092 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 (Kg)

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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) -18.6A
Threshold Voltage -3V
Factory Lead Time 14 Weeks
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Drain to Source Breakdown Voltage -40V
Pulsed Drain Current-Max (IDM) 60A
Number of Pins 8
Weight 506.605978mg
Dual Supply Voltage 40V
Transistor Element Material SILICON
Max Junction Temperature (Tj) 150°C
Nominal Vgs -3 V
Manufacturer Package Identifier S17-0173-Single
Height 1.17mm
Operating Temperature -55°C~150°C TJ
Length 4.9mm
Packaging Tape & Reel (TR)
Width 5.89mm
Radiation Hardening No
Published 2011
REACH SVHC No SVHC
Series TrenchFET®
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Pbfree Code yes
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Resistance 9.2mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.2m Ω @ 18.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
See Relate Datesheet