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  • SI7463DP-T1-GE3

SI7463DP-T1-GE3

MOSFET P-CH 40V 11A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7463DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 994
  • Description: MOSFET P-CH 40V 11A PPAK SO-8 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Factory Lead Time 14 Weeks
Fall Time (Typ) 25 ns
Mount Surface Mount
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) -18.6A
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Number of Pins 8
Drain to Source Breakdown Voltage -40V
Weight 506.605978mg
Pulsed Drain Current-Max (IDM) 60A
Transistor Element Material SILICON
Max Junction Temperature (Tj) 150°C
Manufacturer Package Identifier S17-0173-Single
Nominal Vgs -3 V
Operating Temperature -55°C~150°C TJ
Height 1.17mm
Packaging Tape & Reel (TR)
Length 4.9mm
Published 2016
Width 5.89mm
Series TrenchFET®
Radiation Hardening No
JESD-609 Code e3
REACH SVHC No SVHC
Pbfree Code yes
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 5
ECCN Code EAR99
Resistance 9.2MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 9.2m Ω @ 18.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 25ns
See Relate Datesheet