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  • SI7465DP-T1-E3

SI7465DP-T1-E3

MOSFET P-CH 60V 3.2A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7465DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 745
  • Description: MOSFET P-CH 60V 3.2A PPAK SO-8 (Kg)

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Details

Tags

Parameters
Terminal Position DUAL
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.2A
Terminal Form C BEND
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 25A
Peak Reflow Temperature (Cel) 260
Avalanche Energy Rating (Eas) 24.2 mJ
Time@Peak Reflow Temperature-Max (s) 40
Max Junction Temperature (Tj) 150°C
Pin Count 8
Height 1.12mm
Length 4.9mm
JESD-30 Code R-XDSO-C5
Width 5.89mm
Radiation Hardening No
Number of Elements 1
Number of Channels 1
Factory Lead Time 14 Weeks
REACH SVHC No SVHC
Mount Surface Mount
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mounting Type Surface Mount
Power Dissipation-Max 1.5W Ta
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Element Configuration Single
Transistor Element Material SILICON
Operating Mode ENHANCEMENT MODE
Operating Temperature -55°C~150°C TJ
Power Dissipation 1.5W
Packaging Tape & Reel (TR)
Published 2009
Case Connection DRAIN
Turn On Delay Time 8 ns
Series TrenchFET®
FET Type P-Channel
Rds On (Max) @ Id, Vgs 64m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
JESD-609 Code e3
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Pbfree Code yes
Part Status Active
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Rise Time 9ns
Number of Terminations 5
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
ECCN Code EAR99
Vgs (Max) ±20V
Resistance 64mOhm
Fall Time (Typ) 9 ns
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Turn-Off Delay Time 65 ns
Subcategory Other Transistors
Continuous Drain Current (ID) -5A
Technology MOSFET (Metal Oxide)
Threshold Voltage -3V
See Relate Datesheet