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  • SI7613DN-T1-GE3

SI7613DN-T1-GE3

MOSFET P-CH 20V 35A 1212-8 PPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7613DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 985
  • Description: MOSFET P-CH 20V 35A 1212-8 PPAK (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 2620pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 17A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 60A
Height 1.04mm
Length 3.05mm
Width 3.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.8W Ta 52.1W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.8W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.7m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
See Relate Datesheet