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  • SI7615ADN-T1-GE3

SI7615ADN-T1-GE3

MOSFET P-CH 20V 35A 1212-8S


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7615ADN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 406
  • Description: MOSFET P-CH 20V 35A 1212-8S (Kg)

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Details

Tags

Parameters
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.7W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5590pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) -22.1A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage -20V
Avalanche Energy Rating (Eas) 20 mJ
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 3.4mm
Width 3.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.4mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
See Relate Datesheet