English

All Products

View All >>
  • SI7634BDP-T1-GE3

SI7634BDP-T1-GE3

SI7634BDP Series N-Channel 30 V 0.0054 Ohm Power MosFet SMT - POWERPAK-SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7634BDP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 306
  • Description: SI7634BDP Series N-Channel 30 V 0.0054 Ohm Power MosFet SMT - POWERPAK-SO-8 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Avalanche Energy Rating (Eas) 45 mJ
Factory Lead Time 14 Weeks
Time@Peak Reflow Temperature-Max (s) 30
Height 1.04mm
Mount Surface Mount
Length 4.9mm
Pin Count 8
Mounting Type Surface Mount
Width 5.89mm
JESD-30 Code R-XDSO-C5
Package / Case PowerPAK® SO-8
Radiation Hardening No
Number of Elements 1
REACH SVHC Unknown
Number of Pins 8
RoHS Status ROHS3 Compliant
Number of Channels 1
Lead Free Lead Free
Weight 506.605978mg
Power Dissipation-Max 5W Ta 48W Tc
Transistor Element Material SILICON
Element Configuration Single
Operating Temperature -55°C~150°C TJ
Operating Mode ENHANCEMENT MODE
Packaging Tape & Reel (TR)
Power Dissipation 5W
Published 2008
Case Connection DRAIN
Series TrenchFET®
Turn On Delay Time 30 ns
FET Type N-Channel
JESD-609 Code e3
Rds On (Max) @ Id, Vgs 5.4m Ω @ 15A, 10V
Pbfree Code yes
Vgs(th) (Max) @ Id 2.6V @ 250μA
Part Status Active
Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 15V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C 40A Tc
Number of Terminations 5
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
ECCN Code EAR99
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Resistance 5.4mOhm
Fall Time (Typ) 12 ns
Turn-Off Delay Time 34 ns
Terminal Finish MATTE TIN
Continuous Drain Current (ID) 22.5A
Subcategory FET General Purpose Power
Threshold Voltage 1.4V
Technology MOSFET (Metal Oxide)
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Terminal Position DUAL
Drain to Source Breakdown Voltage 30V
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Pulsed Drain Current-Max (IDM) 70A
See Relate Datesheet