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SI7655DN-T1-GE3

MOSFET P-CH 20V 40A PPAK 1212


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7655DN-T1-GE3
  • Package: PowerPAK® 1212-8S
  • Datasheet: PDF
  • Stock: 914
  • Description: MOSFET P-CH 20V 40A PPAK 1212 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -40A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0036Ohm
Drain to Source Breakdown Voltage -20V
Height 780μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 2
Power Dissipation-Max 4.8W Ta 57W Tc
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.8W
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
See Relate Datesheet