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  • SI7892BDP-T1-E3

SI7892BDP-T1-E3

MOSFET N-CH 30V 15A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7892BDP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 665
  • Description: MOSFET N-CH 30V 15A PPAK SO-8 (Kg)

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Details

Tags

Parameters
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3775pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 30V
Nominal Vgs 1 V
Height 1.04mm
Length 4.9mm
Width 5.89mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.2mOhm
See Relate Datesheet