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  • SI7898DP-T1-E3

SI7898DP-T1-E3

MOSFET N-CH 150V 3A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7898DP-T1-E3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 671
  • Description: MOSFET N-CH 150V 3A PPAK SO-8 (Kg)

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Details

Tags

Parameters
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Ta
Factory Lead Time 14 Weeks
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Contact Plating Tin
Rise Time 10ns
Mount Surface Mount
Drain to Source Voltage (Vdss) 150V
Mounting Type Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Package / Case PowerPAK® SO-8
Vgs (Max) ±20V
Number of Pins 8
Fall Time (Typ) 10 ns
Weight 506.605978mg
Turn-Off Delay Time 24 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 3A
Threshold Voltage 2V
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 25A
Packaging Tape & Reel (TR)
Max Junction Temperature (Tj) 150°C
Nominal Vgs 4 V
Published 2016
Height 1.12mm
Length 4.9mm
Series TrenchFET®
JESD-609 Code e3
Width 5.89mm
Radiation Hardening No
Pbfree Code yes
Part Status Active
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 5
ECCN Code EAR99
Resistance 85mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-XDSO-C5
See Relate Datesheet