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  • SI7997DP-T1-GE3

SI7997DP-T1-GE3

MOSFET 2P-CH 30V 60A PPAK SO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7997DP-T1-GE3
  • Package: PowerPAK® SO-8 Dual
  • Datasheet: PDF
  • Stock: 484
  • Description: MOSFET 2P-CH 30V 60A PPAK SO-8 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 5.5mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 46W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7997
Pin Count 8
JESD-30 Code R-XDSO-C5
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) -20.8A
Threshold Voltage -2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 45 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard
Height 1.12mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet