English

All Products

View All >>
  • SI8402DB-T1-E1

SI8402DB-T1-E1

MOSFET N-CH 20V 5.3A 2X2 4-MFP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8402DB-T1-E1
  • Package: 4-XFBGA, CSPBGA
  • Datasheet: PDF
  • Stock: 282
  • Description: MOSFET N-CH 20V 5.3A 2X2 4-MFP (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 37MOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 1.47W
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.47W
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 145ns
Fall Time (Typ) 145 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 7.3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage 20V
Height 355.6μm
Length 1.5748mm
Width 1.6002mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Packaging Cut Tape (CT)
Published 2016
Series TrenchFET®
See Relate Datesheet