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  • SI8416DB-T2-E1

SI8416DB-T2-E1

VISHAY SI8416DB-T2-E1 MOSFET Transistor, N Channel, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8416DB-T2-E1
  • Package: 6-UFBGA
  • Datasheet: PDF
  • Stock: 157
  • Description: VISHAY SI8416DB-T2-E1 MOSFET Transistor, N Channel, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV (Kg)

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Details

Tags

Parameters
Factory Lead Time 43 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2.77W Ta 13W Tc
Element Configuration Single
Power Dissipation 2.77W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 4V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 350mV
Gate to Source Voltage (Vgs) 5V
Height 310μm
Length 1.5mm
Width 1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet