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  • SI8429DB-T1-E1

SI8429DB-T1-E1

Single P-Channel 8 V 35 mOhms Surface Mount Power Mosfet - MICRO-FOOT


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8429DB-T1-E1
  • Package: 4-XFBGA, CSPBGA
  • Datasheet: PDF
  • Stock: 998
  • Description: Single P-Channel 8 V 35 mOhms Surface Mount Power Mosfet - MICRO-FOOT (Kg)

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Details

Tags

Parameters
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.77W Ta 6.25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.77W
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Factory Lead Time 33 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 4V
Current - Continuous Drain (Id) @ 25°C 11.7A Tc
Contact Plating Copper, Silver, Tin
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Mount Surface Mount
Rise Time 25ns
Drain to Source Voltage (Vdss) 8V
Mounting Type Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 155 ns
Package / Case 4-XFBGA, CSPBGA
Turn-Off Delay Time 260 ns
Continuous Drain Current (ID) -10.2A
Number of Pins 4
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 7.8A
Drain to Source Breakdown Voltage -8V
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 25A
Height 360μm
Length 1.6mm
Operating Temperature -55°C~150°C TJ
Width 1.6mm
Radiation Hardening No
Packaging Tape & Reel (TR)
REACH SVHC Unknown
Published 2011
RoHS Status ROHS3 Compliant
Series TrenchFET®
Lead Free Lead Free
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 35mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
See Relate Datesheet