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  • SI8461DB-T2-E1

SI8461DB-T2-E1

SI8461DB-T2-E1 P-channel MOSFET Transistor; 3 A; 20 V; 4-Pin MICRO FOOT


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8461DB-T2-E1
  • Package: 4-XFBGA, CSPBGA
  • Datasheet: PDF
  • Stock: 543
  • Description: SI8461DB-T2-E1 P-channel MOSFET Transistor; 3 A; 20 V; 4-Pin MICRO FOOT (Kg)

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Details

Tags

Parameters
Element Configuration Single
Operating Temperature -55°C~150°C TJ
Operating Mode ENHANCEMENT MODE
Packaging Tape & Reel (TR)
Power Dissipation 780mW
Published 2013
Turn On Delay Time 15 ns
FET Type P-Channel
Series TrenchFET®
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1.5A, 4.5V
JESD-609 Code e3
Vgs(th) (Max) @ Id 1V @ 250μA
Pbfree Code yes
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Part Status Obsolete
Rise Time 25ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -3.7A
Threshold Voltage -1V
Number of Terminations 4
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.5A
ECCN Code EAR99
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
REACH SVHC Unknown
Resistance 100mOhm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Factory Lead Time 15 Weeks
Peak Reflow Temperature (Cel) 260
Mount Surface Mount
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Elements 1
Number of Channels 1
Number of Pins 4
Power Dissipation-Max 780mW Ta 1.8W Tc
Transistor Element Material SILICON
See Relate Datesheet