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  • SI8802DB-T2-E1

SI8802DB-T2-E1

MOSFET 8V N-CH Micro Foot


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8802DB-T2-E1
  • Package: 4-XFBGA
  • Datasheet: PDF
  • Stock: 933
  • Description: MOSFET 8V N-CH Micro Foot (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2015
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 54mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 8V
Nominal Vgs 350 mV
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet