English

All Products

View All >>
  • SI8812DB-T2-E1

SI8812DB-T2-E1

MOSFET N-CH 20V MICROFOOT


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8812DB-T2-E1
  • Package: 4-UFBGA
  • Datasheet: PDF
  • Stock: 331
  • Description: MOSFET N-CH 20V MICROFOOT (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
FET Type N-Channel
Factory Lead Time 44 Weeks
Transistor Application SWITCHING
Mount Surface Mount
Rds On (Max) @ Id, Vgs 59m Ω @ 1A, 4.5V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 8V
Package / Case 4-UFBGA
Drain to Source Voltage (Vdss) 20V
Number of Pins 4
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Transistor Element Material SILICON
Vgs (Max) ±5V
Continuous Drain Current (ID) 3.2A
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.065Ohm
DS Breakdown Voltage-Min 20V
Packaging Digi-Reel®
RoHS Status ROHS3 Compliant
Published 2016
Lead Free Lead Free
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Reach Compliance Code unknown
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
See Relate Datesheet