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  • SI8816EDB-T2-E1

SI8816EDB-T2-E1

MOSFET N-CH 30V MICRO FOOT


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8816EDB-T2-E1
  • Package: 4-XFBGA
  • Datasheet: PDF
  • Stock: 681
  • Description: MOSFET N-CH 30V MICRO FOOT (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 109m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 2.3A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 1.5A
Drain-source On Resistance-Max 0.123Ohm
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 44 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet