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SI8817DB-T2-E1

MOSFET P-CH 20V MICROFOOT


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8817DB-T2-E1
  • Package: 4-XFBGA
  • Datasheet: PDF
  • Stock: 202
  • Description: MOSFET P-CH 20V MICROFOOT (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 44 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 76m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet