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SI8821EDB-T2-E1

MOSFET P-CH 30V MICRO FOOT


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8821EDB-T2-E1
  • Package: 4-XFBGA, CSPBGA
  • Datasheet: PDF
  • Stock: 154
  • Description: MOSFET P-CH 30V MICRO FOOT (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.15Ohm
DS Breakdown Voltage-Min 30V
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet