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  • SI8823EDB-T2-E1

SI8823EDB-T2-E1

P-Channel 20 V (D-S) MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI8823EDB-T2-E1
  • Package: 4-XFBGA
  • Datasheet: PDF
  • Stock: 788
  • Description: P-Channel 20 V (D-S) MOSFET (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen III
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 900mW Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 95m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
RoHS Status ROHS3 Compliant
Factory Lead Time 30 Weeks
Mounting Type Surface Mount
Package / Case 4-XFBGA
See Relate Datesheet