All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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Sensors
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RF/IF & RFID
- RF/IF & RFID
- Attenuators
- Balun
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- RFI & EMI Materials
- RFID Accessories
- RFID Antennas
- RFID Boards
- RFID ICs
- RFID Reader Modules
- RFID Tags
- Circuit Protection
- Crystals
- Inductors
- Filters
Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFZ48RPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | 50A | No | 3 | AVALANCHE RATED | TO-220-3 | 9.01mm | 4.7mm | Through Hole | 6.000006g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 190W | 8.1 ns | 190W Tc | 180 ns | 50A | SWITCHING | 210 ns | SILICON | N-Channel | 18m Ω @ 43A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 250ns | 250 ns | 20V | 60V | 50A Tc | 290A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFBC30APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2004 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 2.2Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 44A | 1 | 600V | 1 | Single | 74W | 9.8 ns | 4.5V | 2.2Ohm | TO-220AB | 74W Tc | 3.6A | 19 ns | N-Channel | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 510pF @ 25V | 23nC @ 10V | 13ns | 12 ns | 30V | 600V | 4.5 V | 3.6A Tc | 600V | 510pF | 10V | ±30V | 2.2 Ω | ||||||||||||||||||||||||||||||||||||||
| SQP120N10-09_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | TO-220-3 | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 375W Tc | 0.0095Ohm | 100V | SILICON | N-Channel | 9.5m Ω @ 30A, 10V | 3.5V @ 250μA | 8645pF @ 25V | 180nC @ 10V | 120A | 120A Tc | 100V | 480A | 266 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD412ED-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | PowerPAK® 0806 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.25W Ta | SWITCHING | 0.34Ohm | 12V | SILICON | N-Channel | 340m Ω @ 500mA, 4.5V | 900mV @ 250μA | 21pF @ 6V | 0.71nC @ 4.5V | 500mA Tc | 12V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR610DP-T1-RE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.17mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | S17-0173-Single | NOT SPECIFIED | NOT SPECIFIED | 1 | 6.25W | 9 ns | 104W Tc | 8.6A | 150°C | 20 ns | N-Channel | 31.9m Ω @ 10A, 10V | 4V @ 250μA | 1380pF @ 100V | 38nC @ 10V | 20V | 200V | 35.4A Tc | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR846DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 7.8mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 6.25W | 18 ns | 1.5V | 6.25W Ta 104W Tc | 60A | SWITCHING | 36 ns | SILICON | N-Channel | 7.8m Ω @ 20A, 10V | 3.5V @ 250μA | 2870pF @ 50V | 72nC @ 10V | 18ns | 20 ns | 20V | 100V | 3.5 V | 20A | 60A Tc | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SQM40031EL_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | 5.08mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 375W | 21 ns | 375W Tc | -120A | 175°C | 0.003Ohm | 250 ns | SILICON | P-Channel | 3m Ω @ 30A, 10V | 2.5V @ 250μA | 39000pF @ 25V | 800nC @ 10V | 20V | -40V | 120A Tc | 40V | 300A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQM90142E_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 2 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | 5.08mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 375W | 17 ns | 375W Tc | 95A | 175°C | 39 ns | SILICON | N-Channel | 15.3m Ω @ 20A, 10V | 3.5V @ 250μA | 4200pF @ 25V | 85nC @ 10V | 20V | 200V | 95A Tc | 205 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUG80050E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | ThunderFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | unknown | 25.11mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 500W | 18 ns | 500W Tc | 100A | 175°C | 72 ns | N-Channel | 5.4m Ω @ 20A, 10V | 4V @ 250μA | 6250pF @ 75V | 165nC @ 10V | 20V | 150V | 100A Tc | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP10N40D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 147W | 12 ns | 3V | 147W Tc | 10A | SWITCHING | 0.6Ohm | 18 ns | SILICON | N-Channel | 600m Ω @ 5A, 10V | 5V @ 250μA | 526pF @ 100V | 30nC @ 10V | 18ns | 14 ns | 30V | 400V | 10A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQM50N04-4M1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 12 ns | 3V | 4.1mOhm | TO-263 (D2Pak) | 150W Tc | 50A | 35 ns | N-Channel | 4.1mOhm @ 30A, 10V | 3.5V @ 250μA | 6715pF @ 25V | 105nC @ 10V | 5ns | 9 ns | 20V | 50A Tc | 40V | 6.715nF | 10V | ±20V | 4.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF6N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | 10.63mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | Unknown | 9.8mm | 4.83mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | ISOLATED | Single | 30W | 12 ns | 3V | 30W Tc | 6A | SWITCHING | 1Ohm | 14 ns | SILICON | N-Channel | 1 Ω @ 3A, 10V | 5V @ 250μA | 311pF @ 100V | 18nC @ 10V | 11ns | 8 ns | 30V | 400V | 6A | 6A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHP10N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 12 ns | 147W Tc | 10A | SWITCHING | 0.6Ohm | 18 ns | SILICON | N-Channel | 600m Ω @ 5A, 10V | 5V @ 250μA | 526pF @ 100V | 30nC @ 10V | 18ns | 14 ns | 5V | 400V | 10A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF7N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Cut Tape (CT) | 2012 | E | Active | 1 (Unlimited) | Non-RoHS Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 31W Tc | N-Channel | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 680pF @ 100V | 40nC @ 10V | 7A Tc | 600V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF624SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2011 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 1.1Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 3.1W | 7 ns | 2V | 1.1Ohm | D2PAK | 3.1W Ta 50W Tc | 4.4A | 20 ns | N-Channel | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 13ns | 12 ns | 20V | 250V | 4.4A Tc | 250V | 260pF | 10V | ±20V | 1.1 Ω | |||||||||||||||||||||||||||||||||||||||||
| SQ3419AEEV-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | SOT-23-6 Thin, TSOT-23-6 | unknown | 1.1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 5W | 9 ns | 5W Tc | -6.9A | 175°C | 26 ns | SILICON | P-Channel | 61m Ω @ 2.5A, 10V | 2.5V @ 250μA | 975pF @ 20V | 12.5nC @ 4.5V | 12V | -40V | 6.9A Tc | 40V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4178DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 21mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 8 | 1 | 1 | Single | 2.4W | 20 ns | 2.8V | 2.4W Ta 5W Tc | 12A | SWITCHING | 30V | 12 ns | SILICON | N-Channel | 21m Ω @ 8.4A, 10V | 2.8V @ 250μA | 405pF @ 15V | 12nC @ 10V | 10 ns | 25V | 1.4 V | 12A Tc | 30V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IRF9Z34SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2005 | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 140mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | 1 | Single | 3.7W | 18 ns | -4V | 3.7W Ta 88W Tc | 18A | SWITCHING | 60V | 20 ns | SILICON | P-Channel | 140m Ω @ 11A, 10V | 4V @ 250μA | 1100pF @ 25V | 34nC @ 10V | 120ns | 58 ns | 20V | 18A Tc | 60V | 72A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF640PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 18A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 180mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | 4V | 180mOhm | TO-220AB | 125W Tc | 18A | 45 ns | N-Channel | 180mOhm @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 70nC @ 10V | 51ns | 36 ns | 20V | 200V | 2 V | 18A Tc | 200V | 1.3nF | 10V | ±20V | 180 mΩ | ||||||||||||||||||||||||||||||||||||||
| IRF730BPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | SINGLE | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 12 ns | 104W Tc | 6A | SWITCHING | 1Ohm | 400V | 14 ns | SILICON | N-Channel | 1 Ω @ 3A, 10V | 5V @ 250μA | 311pF @ 100V | 18nC @ 10V | 11ns | 8 ns | 30V | 6A | 6A Tc | 400V | 13A | 104 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHP5N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 104W | 12 ns | 3V | 104W Tc | 5.3A | SWITCHING | 500V | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 5.3A Tc | 500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SQJA70EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 27W Tc | 0.208Ohm | 100V | SILICON | N-Channel | 95m Ω @ 4A, 10V | 3.5V @ 250μA | 220pF @ 25V | 7nC @ 10V | 14.7A | 14.7A Tc | 100V | 18A | 5 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | 6.7mm | ROHS3 Compliant | Lead Free | No | 4 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Unknown | 1.8mm | 3.7mm | 200mOhm | Surface Mount | 250.212891mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | DUAL | GULL WING | 260 | 40 | 4 | R-PDSO-G3 | 1 | 55V | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2W | 9.3 ns | 2V | 2W Ta 3.1W Tc | 2.7A | SWITCHING | 17 ns | SILICON | N-Channel | 200m Ω @ 1.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 1 V | 2.7A Tc | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||
| SQJ464EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | EAR99 | Non-RoHS Compliant | Lead Free | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 0.017Ohm | 60V | SILICON | N-Channel | 17m Ω @ 7.1A, 10V | 2.5V @ 250μA | 2086pF @ 30V | 44nC @ 10V | 32A | 32A Tc | 60V | 130A | 31 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 200mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 9.3 ns | 2.5W Ta 25W Tc | 7.7A | SWITCHING | 17 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 7.7A Tc | 27.4 mJ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||
| SI8823EDB-T2-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4-XFBGA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 900mW Tc | P-Channel | 95m Ω @ 1A, 4.5V | 800mV @ 250μA | 580pF @ 10V | 10nC @ 4.5V | 2.7A Tc | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8424CDB-T1-E1 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Surface Mount | Cut Tape (CT) | 2014 | TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 4 | 4-UFBGA, WLCSP | No SVHC | 20mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | BALL | 1 | FET General Purpose Power | 1 | Single | 2.7W | 30 ns | 800mV | 1.1W Ta 2.7W Tc | 10A | SWITCHING | 8V | 150 ns | SILICON | N-Channel | 20m Ω @ 2A, 4.5V | 800mV @ 250μA | 2340pF @ 4V | 40nC @ 4.5V | 40ns | 40 ns | 5V | 8V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 5.7mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 10W | 26 ns | 10W Ta 83W Tc | 90A | SWITCHING | 25 ns | SILICON | N-Channel | 5.7m Ω @ 20A, 10V | 2.4V @ 250μA | 3800pF @ 15V | 95nC @ 10V | 230ns | 9 ns | 20V | 1.2 V | 50A | 90A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIS402DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 6mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 25 ns | 3V | 3.8W Ta 52W Tc | 35A | SWITCHING | 30V | 25 ns | SILICON | N-Channel | 6m Ω @ 19A, 10V | 2.2V @ 250μA | 1700pF @ 15V | 42nC @ 10V | 20ns | 15 ns | 20V | 35A Tc | 30V | 70A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SQM47N10-24L_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | TrenchFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 136W | 10 ns | 2V | 136W Tc | 47A | 0.024Ohm | 32 ns | SILICON | N-Channel | 24m Ω @ 40A, 10V | 2.5V @ 250μA | 3620pF @ 25V | 72nC @ 10V | 6ns | 6 ns | 20V | 2 V | 47A Tc | 100V | 92 mJ | 4.5V 10V | ±20V |