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  • SIA418DJ-T1-GE3

SIA418DJ-T1-GE3

MOSFET 30V 12A 19W 18mohm @ 10V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA418DJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 528
  • Description: MOSFET 30V 12A 19W 18mohm @ 10V (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 2.4V
Drain to Source Breakdown Voltage 30V
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet