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  • SIA433EDJ-T1-GE3

SIA433EDJ-T1-GE3

SIA Series P-Channel 20 V 15 mO 19 W Surface Mount MOSFET - POWERPAK SC-70-6L


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA433EDJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 960
  • Description: SIA Series P-Channel 20 V 15 mO 19 W Surface Mount MOSFET - POWERPAK SC-70-6L (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 8V
Rise Time 1.7μs
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 3.2 μs
Turn-Off Delay Time 6 μs
Continuous Drain Current (ID) -12A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 50A
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 15mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 710 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 7.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
See Relate Datesheet