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  • SIA436DJ-T1-GE3

SIA436DJ-T1-GE3

MOSFET N-CH 8V 12A SC70-6L


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA436DJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 111
  • Description: MOSFET N-CH 8V 12A SC70-6L (Kg)

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Details

Tags

Parameters
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 350mV
Gate to Source Voltage (Vgs) 5V
Drain-source On Resistance-Max 0.0094Ohm
Drain to Source Breakdown Voltage 8V
Pulsed Drain Current-Max (IDM) 50A
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.4m Ω @ 15.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1508pF @ 4V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 5V
See Relate Datesheet