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SIA445EDJ-T1-GE3

MOSFET P-CH 20V 12A SC-70


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA445EDJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 657
  • Description: MOSFET P-CH 20V 12A SC-70 (Kg)

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Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 16.5m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) -11.8A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 150°C
Height 800μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 16.5mOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
See Relate Datesheet