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  • SIA447DJ-T1-GE3

SIA447DJ-T1-GE3

VISHAY - SIA447DJ-T1-GE3 - MOSFET Transistor, P Channel, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA447DJ-T1-GE3
  • Package: PowerPAK® SC-70-6
  • Datasheet: PDF
  • Stock: 387
  • Description: VISHAY - SIA447DJ-T1-GE3 - MOSFET Transistor, P Channel, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 6V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 8V
Rise Time 60ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 12A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 50A
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet