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SIA533EDJ-T1-GE3

MOSFET 12V 4.5A/4.5A N&P-CH MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA533EDJ-T1-GE3
  • Package: PowerPAK® SC-70-6 Dual
  • Datasheet: PDF
  • Stock: 352
  • Description: MOSFET 12V 4.5A/4.5A N&P-CH MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 34MOhm
Subcategory Other Transistors
Max Power Dissipation 7.8W
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number SIA533
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 7.8W
Case Connection DRAIN
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 12V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 4.5A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 400 mV
Height 800μm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet