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  • SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

MOSFET 20V 4.5A 6.5W


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA811ADJ-T1-GE3
  • Package: PowerPAK® SC-70-6 Dual
  • Datasheet: PDF
  • Stock: 370
  • Description: MOSFET 20V 4.5A 6.5W (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series LITTLE FOOT®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.8W Ta 6.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 116m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 8V
Rise Time 45ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.5A
Drain to Source Breakdown Voltage -20V
FET Feature Schottky Diode (Isolated)
Height 750μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet