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SIA906EDJ-T1-GE3

MOSFET 2N-CH 20V 4.5A SC70-6


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIA906EDJ-T1-GE3
  • Package: PowerPAK® SC-70-6 Dual
  • Datasheet: PDF
  • Stock: 904
  • Description: MOSFET 2N-CH 20V 4.5A SC70-6 (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON
Manufacturer Package Identifier C-07431-DUAL
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 46mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 7.8W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 850μm
Length 2.05mm
Width 2.05mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet