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  • SIB410DK-T1-GE3

SIB410DK-T1-GE3

MOSFET 30V 9A N-CH MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIB410DK-T1-GE3
  • Package: PowerPAK® SC-75-6L
  • Datasheet: PDF
  • Stock: 550
  • Description: MOSFET 30V 9A N-CH MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L
Number of Pins 6
Weight 95.991485mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-C3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 13W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet