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  • SIB417EDK-T1-GE3

SIB417EDK-T1-GE3

MOSFET P-CH 8V 9A SC75-6


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIB417EDK-T1-GE3
  • Package: PowerPAK® SC-75-6L
  • Datasheet: PDF
  • Stock: 530
  • Description: MOSFET P-CH 8V 9A SC75-6 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L
Number of Pins 6
Weight 95.991485mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 565pF @ 4V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 31ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) -9A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 5.8A
Drain-source On Resistance-Max 0.058Ohm
DS Breakdown Voltage-Min 8V
Nominal Vgs -1 V
Height 750μm
Length 1.6mm
Width 1.6mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet