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SIB441EDK-T1-GE3

MOSFET -12V [email protected] 9A P-Ch G-III


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIB441EDK-T1-GE3
  • Package: PowerPAK® SC-75-6L
  • Datasheet: PDF
  • Stock: 581
  • Description: MOSFET -12V [email protected] 9A P-Ch G-III (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Power Dissipation-Max 2.4W Ta 13W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 13W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25.5m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 6V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 8V
Rise Time 42ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 8.3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 40A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet