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  • SIE802DF-T1-E3

SIE802DF-T1-E3

MOSFET N-CH 30V 60A 10-POLARPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIE802DF-T1-E3
  • Package: 10-PolarPAK® (L)
  • Datasheet: PDF
  • Stock: 315
  • Description: MOSFET N-CH 30V 60A 10-POLARPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 10
JESD-30 Code R-XDSO-N4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9m Ω @ 23.6A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42.7A
DS Breakdown Voltage-Min 30V
Height 800μm
Length 6.15mm
Width 5.16mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (L)
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.9mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
See Relate Datesheet