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  • SIHB6N65E-GE3

SIHB6N65E-GE3

Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHB6N65E-GE3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 781
  • Description: Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 78W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 100V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 7A
Factory Lead Time 14 Weeks
Mount Surface Mount
Threshold Voltage 2V
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Gate to Source Voltage (Vgs) 20V
Number of Pins 3
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 650V
Transistor Element Material SILICON
Avalanche Energy Rating (Eas) 56 mJ
Operating Temperature -55°C~150°C TJ
Radiation Hardening No
Packaging Tube
REACH SVHC Unknown
Published 2014
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lead Free Lead Free
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 600mOhm
See Relate Datesheet