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  • SIHD3N50D-E3

SIHD3N50D-E3

Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) TO-252AA


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHD3N50D-E3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 712
  • Description: Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) TO-252AA (Kg)

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Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Pulsed Drain Current-Max (IDM) 5.5A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 9 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 100V
See Relate Datesheet