All Products
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Integrated Circuits (ICs)
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Connectors
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Discrete Semiconductors
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Capacitors
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Sensors
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RF/IF & RFID
- RF/IF & RFID
- Attenuators
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- RFID Accessories
- RFID Antennas
- RFID Boards
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- RFID Reader Modules
- RFID Tags
- Circuit Protection
- Crystals
- Inductors
- Filters
Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFD123PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2015 | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 270mOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 1W | 8.2 ns | 2V | 1.3W Ta | 600mA | SWITCHING | 14 ns | SILICON | N-Channel | 270m Ω @ 780mA, 10V | 4V @ 250μA | 360pF @ 25V | 16nC @ 10V | 17ns | 17 ns | 20V | 200V | 1.3A Ta | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFU9214PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.38mm | 3Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | DRAIN | Single | 50W | 11 ns | -4V | 50W Tc | 2.7A | SWITCHING | 20 ns | SILICON | P-Channel | 3 Ω @ 1.7A, 10V | 4V @ 250μA | 220pF @ 25V | 14nC @ 10V | 14ns | 17 ns | 20V | -250V | -4 V | 2.7A Tc | 250V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFU9210PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | -1.9A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.38mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 8 ns | 2.5W Ta 25W Tc | 1.9A | SWITCHING | 3Ohm | 11 ns | SILICON | P-Channel | 3 Ω @ 1.1A, 10V | 4V @ 250μA | 170pF @ 25V | 8.9nC @ 10V | 12ns | 13 ns | 20V | -200V | 1.9A Tc | 200V | 7.6A | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIHU6N62E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Cut Tape (CT) | 2016 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | DRAIN | Single | 12 ns | 78W Tc | 6A | SWITCHING | 0.9Ohm | 22 ns | SILICON | N-Channel | 900m Ω @ 3A, 10V | 4V @ 250μA | 578pF @ 100V | 34nC @ 10V | 10ns | 16 ns | 20V | 6A | 6A Tc | 620V | 88 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU9120PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | -5.6A | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 600mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 9.6 ns | -4V | 2.5W Ta 42W Tc | -5.6A | SWITCHING | 21 ns | SILICON | P-Channel | 600m Ω @ 3.4A, 10V | 4V @ 250μA | 390pF @ 25V | 18nC @ 10V | 47ns | 31 ns | 20V | -100V | 5.6A Tc | 100V | 22A | 10V | ±20V | |||||||||||||||||||||||||||||
| IRFUC20PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.39mm | 4.4Ohm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 10 ns | 4V | 2.5W Ta 42W Tc | 2A | SWITCHING | 30 ns | SILICON | N-Channel | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 350pF @ 25V | 18nC @ 10V | 23ns | 25 ns | 20V | 600V | 2A | 2A Tc | 8A | 74 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7868ADP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 2.25mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 5.4W | 28 ns | 5.4W Ta 83W Tc | 40A | SWITCHING | 58 ns | SILICON | N-Channel | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 6110pF @ 10V | 150nC @ 10V | 120ns | 12 ns | 16V | 20V | 600 mV | 35A | 40A Tc | 70A | 45 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4mm | 8.8MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 3W | 12 ns | 1.5V | 3W Ta 6W Tc | 13A | 150°C | SWITCHING | 34 ns | SILICON | N-Channel | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 1970pF @ 50V | 67nC @ 10V | 20V | 100V | 1.5 V | 18.4A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFD9014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | Active | 1 (Unlimited) | 175°C | -55°C | 6.2738mm | ROHS3 Compliant | Lead Free | No | 4 | 4-DIP (0.300, 7.62mm) | No SVHC | 2.54mm | 3.3782mm | 5.0038mm | 500mOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 7.62 mm | Single | 1.3W | 11 ns | -4V | 500mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 1.1A | 10 ns | P-Channel | 500mOhm @ 660mA, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 63 ns | 20V | 60V | -60V | -4 V | 1.1A Ta | 60V | 270pF | 10V | ±20V | 500 mΩ | |||||||||||||||||||||||||||||||||||||||
| SI7114DN-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | 7.5mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 1.5W | 10 ns | 1V | 1.5W Ta | 18.3A | SWITCHING | 1V | 45 ns | SILICON | N-Channel | 7.5m Ω @ 18.3A, 10V | 3V @ 250μA | 19nC @ 4.5V | 10ns | 10 ns | 20V | 1 V | 11.7A Ta | 30V | 60A | 42 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRFRC20PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 1997 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 4.4Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 10 ns | 4V | 4.4Ohm | D-Pak | 2.5W Ta 42W Tc | 580 ns | 2A | 30 ns | N-Channel | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 350pF @ 25V | 18nC @ 10V | 23ns | 25 ns | 20V | 600V | 4 V | 2A Tc | 600V | 350pF | 10V | ±20V | 4.4 Ω | ||||||||||||||||||||||||||||||||||||||
| SIDR870ADP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 125W Tc | N-Channel | 6.6m Ω @ 20A, 10V | 3V @ 250μA | 2866pF @ 50V | 80nC @ 10V | 95A Tc | 100V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3493DDV-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 2W | 25 ns | 3.6W Tc | -7.5A | 150°C | SWITCHING | 0.024Ohm | 95 ns | SILICON | P-Channel | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 1825pF @ 10V | 30nC @ 4.5V | 8V | -20V | 8A | 8A Tc | 20V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| SI2307CDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | Unknown | 1.12mm | 1.4mm | 88MOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 1.1W | 5.5 ns | -3V | 1.1W Ta 1.8W Tc | -2.7A | 150°C | SWITCHING | 17 ns | SILICON | P-Channel | 88m Ω @ 3.5A, 10V | 3V @ 250μA | 340pF @ 15V | 6.2nC @ 4.5V | 40ns | 40 ns | 20V | -30V | -3 V | 3.5A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4114DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Power | 1 | Single | 2.5W | 30 ns | 2.5W Ta 5.7W Tc | 15.2A | SWITCHING | 0.006Ohm | 20V | 60 ns | SILICON | N-Channel | 6m Ω @ 10A, 10V | 2.1V @ 250μA | 3700pF @ 10V | 95nC @ 10V | 13ns | 30 ns | 16V | 20A | 20A Tc | 20V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| SIHD3N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 12 ns | 69W Tc | 3A | SWITCHING | 500V | 11 ns | SILICON | N-Channel | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 175pF @ 100V | 12nC @ 10V | 9ns | 13 ns | 30V | 3A | 3A Tc | 500V | 5.5A | 9 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFU9020PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.39mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 42W | 8.2 ns | 42W Tc | 9.9A | SWITCHING | 0.28Ohm | 12 ns | SILICON | P-Channel | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 490pF @ 25V | 14nC @ 10V | 67ns | 25 ns | 20V | -50V | -4 V | 9.9A Tc | 50V | 40A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIHG14N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Unknown | 20.82mm | 5.31mm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | DRAIN | Single | 16 ns | 3V | 208W Tc | 14A | SWITCHING | 0.4Ohm | 29 ns | SILICON | N-Channel | 400m Ω @ 7A, 10V | 5V @ 250μA | 1144pF @ 100V | 58nC @ 10V | 27ns | 26 ns | 30V | 500V | 100V | 14A Tc | 56 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHH14N65E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4V | 156W Tc | 15A | SWITCHING | 0.26Ohm | 650V | SILICON | N-Channel | 260m Ω @ 7A, 10V | 4V @ 250μA | 1712pF @ 100V | 96nC @ 10V | 15A Tc | 650V | 226 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF15N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 34W | 34W Tc | 15A | 48 ns | N-Channel | 280m Ω @ 8A, 10V | 4V @ 250μA | 1640pF @ 100V | 96nC @ 10V | 24ns | 25 ns | 4V | 15A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF22N60E-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 150°C | -55°C | 10.63mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 16.12mm | 4.83mm | 180mOhm | Through Hole | MOSFET (Metal Oxide) | 227W | 1 | Single | 227W | 18 ns | 2V | 180mOhm | TO-220 Full Pack | 21A | 59 ns | N-Channel | 180mOhm @ 11A, 10V | 4V @ 250μA | 1920pF @ 100V | 86nC @ 10V | 68ns | 54 ns | 20V | 600V | 21A Tc | 600V | 1.92nF | 180 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP12N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 156W | 16 ns | 156W Tc | 12A | SWITCHING | 35 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 1224pF @ 100V | 70nC @ 10V | 19ns | 18 ns | 20V | 700V | 12A Tc | 650V | 28A | 226 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7153DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | PowerPAK® 1212-8 | 9.5mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 52W Tc | P-Channel | 9.5m Ω @ 20A, 10V | 2.5V @ 250μA | 3600pF @ 15V | 93nC @ 10V | 18A Tc | 30V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA477EDJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | PowerPAK® SC-70-6 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | S-PDSO-N3 | 19W | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 12A | SWITCHING | 0.014Ohm | 12V | SILICON | P-Channel | 14m Ω @ 7A, 4.5V | 1V @ 250μA | 2970pF @ 6V | 87nC @ 8V | 8V | 12A Tc | 12V | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2314EDS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 750mW | 530 ns | 750mW Ta | 3.77A | SWITCHING | 20V | 13.5 μs | SILICON | N-Channel | 33m Ω @ 5A, 4.5V | 950mV @ 250μA | 14nC @ 4.5V | 1.4μs | 5.9 μs | 12V | 3.77A Ta | 20V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SI7806ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.5W | 13 ns | 1.5W Ta | 14A | SWITCHING | 33 ns | SILICON | N-Channel | 11m Ω @ 14A, 10V | 3V @ 250μA | 20nC @ 5V | 10ns | 10 ns | 20V | 30V | 9A | 9A Ta | 40A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFR214TRRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 3 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 7 ns | 2.5W Ta 25W Tc | 2.2A | SWITCHING | 2Ohm | 250V | 16 ns | SILICON | N-Channel | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 7.6ns | 7 ns | 20V | 2.2A Tc | 250V | 8.8A | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUP57N20-33-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2009 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.01mm | 4.7mm | 33mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 3.75W | 24 ns | 4V | 3.75W Ta 300W Tc | 57A | SWITCHING | 45 ns | SILICON | N-Channel | 33m Ω @ 30A, 10V | 4V @ 250μA | 5100pF @ 25V | 130nC @ 10V | 220ns | 200 ns | 20V | 200V | 57A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI4430BDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | 4.5mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.6W | 20 ns | 1V | 1.6W Ta | 14A | 30V | 60 ns | SILICON | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 36nC @ 4.5V | 14ns | 14 ns | 20V | 14A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4431BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 10 ns | -3V | 1.5W Ta | -5.7A | 0.03Ohm | 30V | 70 ns | SILICON | P-Channel | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 20nC @ 5V | 10ns | 10 ns | 20V | 5.7A Ta | 30V | 4.5V 10V | ±20V |