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  • SIHF10N40D-E3

SIHF10N40D-E3

VISHAY SIHF10N40D-E3 MOSFET Transistor, N Channel, 10 A, 400 V, 0.5 ohm, 10 V, 3 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHF10N40D-E3
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 979
  • Description: VISHAY SIHF10N40D-E3 MOSFET Transistor, N Channel, 10 A, 400 V, 0.5 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 400V
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection ISOLATED
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 526pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 3V
See Relate Datesheet