All Products

SIHF18N50D-E3

MOSFET N-CH 500V 18A TO-220FP


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHF18N50D-E3
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 137
  • Description: MOSFET N-CH 500V 18A TO-220FP (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.28Ohm
Drain to Source Breakdown Voltage 500V
Height 9.8mm
Length 10.63mm
Width 4.83mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 100V
See Relate Datesheet