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SIHF30N60E-GE3

MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHF30N60E-GE3
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 408
  • Description: MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 65A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 690 mJ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 125mOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 37W Tc
Element Configuration Single
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 29A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet