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SIHFR1N60A-GE3

Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHFR1N60A-GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 719
  • Description: Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Number of Elements 1
Configuration Single
Power Dissipation-Max 36W Tc
Power Dissipation 36W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7 Ω @ 840mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 229pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 1.4A
Gate to Source Voltage (Vgs) 30V
RoHS Status Non-RoHS Compliant
See Relate Datesheet