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  • SIHG14N50D-GE3

SIHG14N50D-GE3

VISHAY SIHG14N50D-GE3 MOSFET Transistor, N Channel, 14 A, 500 V, 0.32 ohm, 10 V, 3 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG14N50D-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 653
  • Description: VISHAY SIHG14N50D-GE3 MOSFET Transistor, N Channel, 14 A, 500 V, 0.32 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1144pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 3V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 500V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 56 mJ
Height 20.82mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
See Relate Datesheet