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SIHG22N65E-GE3

Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247AC


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SIHG22N65E-GE3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 101
  • Description: Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247AC (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 56A
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 227W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2415pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 22A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 4V
Drain to Source Breakdown Voltage 650V
See Relate Datesheet